发明名称 ION BEAM APPARATUS AND METHOD OF MODIFYING SUBSTRATES
摘要 <p>An ion beam apparatus is used to detect and repair under constant control the defects of a substrate. To that effect, the ion beam apparatus includes a mask (4) arranged in the path of the rays after the ion source (1) and presenting a perforation (5), preferably a round opening. A controllable lens (6) is provided between the ion source (1) and the mask (4) to modify the angle epsilon with which the ion beam leaves the ion source (Fig. 1)</p>
申请公布号 WO8701865(A1) 申请公布日期 1987.03.26
申请号 WO1986AT00053 申请日期 1986.09.10
申请人 STENGL, GERHARD;LOESCHNER, HANS 发明人 STENGL, GERHARD;LOESCHNER, HANS
分类号 G03F1/74;H01J37/30;H01L21/027;(IPC1-7):H01J37/30;G03F1/00 主分类号 G03F1/74
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