发明名称 |
ION BEAM APPARATUS AND METHOD OF MODIFYING SUBSTRATES |
摘要 |
<p>An ion beam apparatus is used to detect and repair under constant control the defects of a substrate. To that effect, the ion beam apparatus includes a mask (4) arranged in the path of the rays after the ion source (1) and presenting a perforation (5), preferably a round opening. A controllable lens (6) is provided between the ion source (1) and the mask (4) to modify the angle epsilon with which the ion beam leaves the ion source (Fig. 1)</p> |
申请公布号 |
WO8701865(A1) |
申请公布日期 |
1987.03.26 |
申请号 |
WO1986AT00053 |
申请日期 |
1986.09.10 |
申请人 |
STENGL, GERHARD;LOESCHNER, HANS |
发明人 |
STENGL, GERHARD;LOESCHNER, HANS |
分类号 |
G03F1/74;H01J37/30;H01L21/027;(IPC1-7):H01J37/30;G03F1/00 |
主分类号 |
G03F1/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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