| 发明名称 |
MULTIJUNCTION SEMICONDUCTOR DEVICE |
| 摘要 |
<p>A heat-resistant multijunction semiconductor device comprising a p-layer, a n-layer and a diffusion-blocking layer, the diffusion-blocking layer being provided between the p-layer and the n-layer. The semiconductor device can reduce the deterioration in quality which is caused by the diffusion of dopant atoms in the p-layer and n-layer, respectively, into the other layer.</p> |
| 申请公布号 |
EP0177864(A3) |
申请公布日期 |
1987.03.25 |
| 申请号 |
EP19850112318 |
申请日期 |
1985.09.28 |
| 申请人 |
KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA |
发明人 |
TAKADA, JUN;YAMAGUCHI, MINORI;TAWADA, YOSHIHISA |
| 分类号 |
H01L31/04;H01L25/07;H01L29/868;H01L31/075;H01L31/20;(IPC1-7):H01L29/06;H01L31/06 |
主分类号 |
H01L31/04 |
| 代理机构 |
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代理人 |
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