| 摘要 |
High voltage interconnects in an integrated circuit are spaced from one or more selected regions of a semiconductor wafer by a field-shield layer comprising a layer of polycrystalline, oxygen-doped silicon on the wafer surface and an insulating layer overlying the polycrystalline silicon layer. The high voltage interconnects can operate, for example, at a voltage of 600 volts above the potential of the selected regions of the wafer without adverse effect on integrated circuit operation. In one form, the selected region of the wafer comprises a highly-doped, voltage-referenced region within the semiconductor wafer and, in another form, comprises a lateral field-supporting region within the wafer. |
