| 摘要 |
PURPOSE:To increase current capacity while miniaturizing a device and reducing manufacturing cost by making a gate bonding-wire fitting region sufficiently smaller than a cathode bonding-wire fitting region. CONSTITUTION:A semiconductor substrate 20 having structure, in which semiconductor layers 23-26 having mutually different conduction types are laminated in succession, and a cathode region 27 and a gate region 28 shaped onto the main surface of the semiconductor layer 26 are formed. A gate bonding-wire fitting region 30 is set in size sufficiently smaller than a cathode bonding-wire fitting region 29. That is, the wire diameter of a gate bonding wire 32 connected to the gate bonding-wire fitting region 30 through an Al electrode 31 is set so as to be brought to half or less of the wire diameter of a cathode bonding wire 34 connected to the cathode bonding-wire fitting region 29 through an Al electrode 33. These gate bonding wire 32 and cathode bonding wire 34 are shaped by a metallic wire such as an Au wire. |
