发明名称 |
Nonvolatile memory device or a single crystal silicon film |
摘要 |
A nonvolatile memory device comprising a plurality of memory cells composed of insulated gate-type field effect semiconductor elements, terminals for applying a writing voltage and a reading voltage to said plurality of memory cells, wirings for connecting in common insulated gate-type field effect transistor elements of said plurality of memory cells, and resistance elements or MISFET's which are connected between the wirings and the terminals, wherein said resistance elements or MISFET's are composed of a polycrystalline silicon film or a single crystal silicon film formed on the field insulation film.
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申请公布号 |
US4653026(A) |
申请公布日期 |
1987.03.24 |
申请号 |
US19820403016 |
申请日期 |
1982.07.29 |
申请人 |
HITACHI, LTD. |
发明人 |
KOMORI, KAZUHIRO;MEGURO, SATOSHI;ITO, SATORU;KIHARA, TOSHIMASA;WAKIMOTO, HARUMI |
分类号 |
H01L27/088;(IPC1-7):G11C11/40 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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