| 摘要 |
PURPOSE:To constantly obtain a Jp similar to the Jp available under high temperature conditions even from a blank original, by providing a heating body in a place close to a photoconductor and not in contact with an optical sensor and utilizing the optical sensor as a temperature sensor for heating the photoconductor when the ambient temperature is low. CONSTITUTION:A thin film 2 is deposited on a glass substrate by means of the vacuum deposition process utilizing an evaporation source of a solid solution composed principally of CdS0.2Se0.8 and containing 0.2mol% of Cu. The film 2 is separated into arrayed linear elements of 1728 bits in total on the basis of 8 bits per mm. The substrate is then heat treated at 500 deg.C for two hours in the atmosphere of vapor containing CdCl2, and an electrode 3 is formed of NiCr/Au for providing an optical sensor. Further, the sputtering is performed with a target of In2O3+SnO2 (2%) so as to form a linear transparent conductive film 4 in a place overlapping the thin film region of the optical sensor located on the rear face of the substrate. An optical sensor array is thus provided, and a driving circuit and a temperature control circuit utilizing the central portion corresponding to one bit as a temperature sensor are added to provide a linear image sensor. |
