| 发明名称 |
CCD gate definition process |
| 摘要 |
A CCD gate definition process utilizing a thin film layer in a double masking process to form a first and second oxide layer over the polysilicon gate material to provide a profiled and tapered oxide layer over the gate without any re-entrant oxide steps.
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| 申请公布号 |
US4652339(A) |
申请公布日期 |
1987.03.24 |
| 申请号 |
US19860831908 |
申请日期 |
1986.02.24 |
| 申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE |
发明人 |
BLUZER, NATHAN;HALVIS, JAMES |
| 分类号 |
H01L21/339;(IPC1-7):H01L21/306;B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L21/339 |
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