Method of synthesizing and growing copper-indium-diselenide (CuInSe2) crystals

摘要

A process for preparing CuInSe2 crystals includes melting a sufficient quantity of B2O3 along with stoichiometric quantities of Cu, In, and Se in a crucible in a high pressure atmosphere of inert gas to encapsulate the CuInSe2 melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2 percent over the stoichiometric quantity is preferred to make up for small amounts of Se lost in the process. The crystal is grown by inserting a seed crystal through the B2O3 encapsulate into contact with the CuInSe2 melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.