ENCAPSULATING HOUSING FOR A POWER SEMICONDUCTOR WITH INPUT-OUTPUT INSULATION

摘要

The invention relates to an encapsulating box for a semiconductor operating in the range 2 to 20 GHz. At these frequencies, existing boxes have a metal base, an insulating frame and a cover. Two input - output connections pass through the frame. A leak line forms between the input and output by stray capacitive coupling of the connections with the welding metal bands of the cover. The invention opposes this input - output coupling by metallization of the box, with reserves for resists around the connection passages. The metal film joining the welding metal films to the electrical earth of the base reflects the power taken by capacitive coupling on the connections. Insulation obtained: -30 db at 15 GHz. Application to ultra-high frequency components.