| 摘要 |
PURPOSE:To obtain sufficient alignment reflection light by using a strong light source having the same wavelength range as an exposing light for an alignment light, and mixing a light absorbent to increase the permeability of light by quickly photobleaching with the alignment light in a lower layer resist. CONSTITUTION:A light absorbent (e.g., certain type of diazonium salt) which is quickly photobleached with strong light strongly depending upon light emitting energy in the speed of photobleaching is mixed in a lower layer resist 3a. This absorbent is hardly bleached in case of exposing since the photobleaching velocity is low with the energy of exposing light to absorb the exposing light 6 to prevent it from reflecting from a wafer substrate, thereby suppressing the adverse influence of standing wave or the like. However, since the absorbent has high photobleaching velocity for the energy of strong alignment light 7a (e.g., He-Cd laser 442nm) in case of alignment, the resist 3a is rapidly photobleached to become a region 3b which transmits light in a short time to obtain the reflected light 7b from the substrate to achieve the alignment. |
