| 摘要 |
<p>The method for forming rapidly and reproducibly a metal silicide on a semiconductor substrate comprises: sputter etching said substrate to remove any contaminants thereon; heating said substrate to a predetermined temperature by direct backside heating thereof; and sputter depositing a metal on said substrate and converting in-situ said deposited metal to metal silicide. The used sputtering apparatus comprises: an enclosed process chamber (10), electrode means (18) mounted inside said chamber (10), said electrode (18) having at least one opening (20, 22, 24, 26) for accommodating a workpiece (28, 30, 32) in said at least one opening (20, 22, 24, 26) with a major portion of the back surface of said workpiece (28, 30, 32) exposed; and heater means (36) arranged inside said chamber (10) in close proximity and direct correspondence with said electrode means (18) for directly heating said at least one workpiece (28, 30, 32) via said exposed back surface.</p> |
