发明名称 Fabrication of semiconductor devices in recrystallized semiconductor films on electrooptic substrates
摘要 This invention relates to a process of manufacturing an integrated structure in which optical signals can be processed in an electrooptic material such as lithium tantalate and electrical signals can be processed in a semiconductor material such as silicon. Microelectronic semiconductors are fabricated in the semiconductor material and electrooptic devices are fabricated in the electrooptic material. Devices made by the process of the present invention are also disclosed.
申请公布号 US4649624(A) 申请公布日期 1987.03.17
申请号 US19830538461 申请日期 1983.10.03
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY 发明人 REEDY, RONALD E.
分类号 G02B6/12;H01L21/84;(IPC1-7):H01L21/42 主分类号 G02B6/12
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