Semiconductor imaging device utilizing static induction transistors

摘要

A semiconductor imaging device having a wide dynamic range to provide optiumum output response characteristics under various illuminating conditions. The device includes a single SIT (Static Induction Transistor) which has a pair of principal electrode regions of one conduction type disposed facing one another through a channel region made of high resistivity semiconductor material. First and second gate regions of the other conduction type are formed in contact with the channel region to control the current flow between the two principal electrode regions. The second gate is common to all pixels. The potential at the second gate region is made variable by a variable power supply, a variable resistor connected between the second gate region and ground, a variable capacitor connected between the second gate region and ground, or combinations of these elements.