发明名称 |
Field effect transistors having parallel-connected subtransistors |
摘要 |
A semiconductor device includes a semiconductor body in which a field effect transistor is formed which is composed of a number of parallel-connected subtransistors. Each subtransistor comprises a polygonal box-shaped cell of the semiconductor body. These cells each comprise a first semiconductor zone embedded in the semiconductor body and a second semiconductor zone embedded in the first zone. The peripheral part of the semiconductor body surrounding the first zone serves as a drain zone of the subtransistor, while the second zone serves as a source zone and a narrow edge strip of the first zone lying between the second zone and the peripheral part serves as a channel zone. The peripheral part comprises strip-shaped parts which extend in the direction of a central part of the first zone. The transistor has a comparatively low resistance in the switched-on state.
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申请公布号 |
US4651181(A) |
申请公布日期 |
1987.03.17 |
申请号 |
US19860827484 |
申请日期 |
1986.02.06 |
申请人 |
U. S. PHILIPS CORPORATION |
发明人 |
DAVID, GERARD R. |
分类号 |
H01L29/06;H01L29/10;H01L29/78;(IPC1-7):H01L29/78;H01L27/08;H01L29/08 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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