| 摘要 |
25307-122 An improved method for fabricating an isolated region for dielectric isolated complementary IC is disclosed. In order to avoid the difficulty of mask alignment and patterning on a deep etched uneven surface of the substrate, the present invention intends to align the pattern before etching. The etching to form the p-type and n-type islands on the surface of the substrate is done at the same time. Next on the surface of the substrate is grown a polysilicon layer. Then the substrate is lapped off from its back surface and removed, leaving the island parts in the polysilicon layer, which becomes a new substrate. FP-56045/T53 |
