PHOTOCONDUCTOR

摘要

PURPOSE:To decrease the electrostatic capacity of an electrophotographic sensitive member and image pickup tube to be used in a charge accumulation mode and to form an excellent photosensitive member which excels in responsiveness with light and permits high-voltage operation by using a layer essentially consisting of a-Ge1-xNx (0Torr, the substrate temp. is increased to 250 deg.C. An a-Ge1-xNx layer 12 which is the charge transfer layer is formed to 15mum by using a Ge polycrystal as a target, introducing Ar under 1-3mTorr and N2 under 2-6 mTorr into the device and applying 300-500W high-frequency power of 13.56MHz frequency. An a-Si layer 13 which is the charge generating layer is formed to 1mum in succession thereof by introducing Ar under 1-10mTorr and H2 under 0.3-4mTorr into the device using the polycrystal as a target and applying 200-800W discharge power.