| 摘要 |
PURPOSE:To obtain the miniature resist pattern by irradiating ionizing radiation to the organic film of copolymer containing epoxy group to form a pattern and immersing it with aromatic amine or acid anhydride. CONSTITUTION:A copolymer of glycidyl methacrylate and methyl methacrylate is formed as an organic coating containing epoxy group on a substrate, a pattern is drawn thereon by far ultraviolet rays, and is heated in N2 to crosslink it. When orthophenylene diamine is immersed therewith, it is reacted with epoxy retained in the pattern to be introduced in large amount without deformation of the pattern. This configuration can provide high resolution in far ultraviolet ray lithography with preferable adherence with the substrate, and there can be obtained a miniatue resist pattern having resistance against ion and plasma. In order to sufficiently immerse the pattern in aromiatic amine or aromatic group acid anhydride, the epoxy group in the copolymer forming the organic coating is preferably higher than 10mol%. |
