| 摘要 |
PURPOSE:To form a submicron pattern with high accuracy by subjecting a thin film obtd. by spreading an org. solvent soln. of an ionizing radiation sensitive high polymr on a water soluble and laminating the same on a substrate to the irradiation of ionizing radiation, development and etching. CONSTITUTION:The thin film obtd. by dissolving the ionizing radiation sensitive high polymer in the org. solvent, spreading the soln. on the water surface and laminating the same on the substrat to form the thin film is subjected to the irradiation of the ionizing radiation, development and etching to form the submicron pattern. The acetalized PVA having the structural unit selected from the formulas I-III (R1 is the residual group derived from aldehyde, etc. in the stage of reaction of aldehyde or ketone and alcohol, R2 is H which can be partly substd. with an acetyl group, R3 is none or a polymer unit of a monomer which can be copolymerized with vinyl acetate) and having 10,000-1,000,000 mol.wt. is used for the above-mentioned high polymer. Benzene, toluene, etc. are used for the org. solvent. Such thin film has no pinholes and permits the free control of the film thickness in Angstrom order so that the uniform film is obtd. The submicron pattern is thus obtd. with good accuracy. |
