| 摘要 |
PURPOSE:To measure the resistivity and the lifetime of a wafer by a method wherein the non-contact detecting element in a loop circuit is placed under a resonating condition and moved close to the semiconductor wafer to be measured and a measurement is performed by the reflected output obtained from the loop circuit. CONSTITUTION:High-frequency power is supplied to a loop 4, the yttrium-iron- garnet (called YIG ball hereinafter) 3 generated resonance of electron spin in a YIG ball 3 by controlling the relating positions of magnets 5 and the center frequency, the bandwidth and the amplitude of a resonance waveform makes a change when the semiconductor wafer W is moved close to the YIG ball 3. Therefore, a relative measurement of a resistivity can be performed based on the change of the resonance waveform generated by the wafer W on a retaining plate 8, and also, by having a constant frequency, the life time of the wafer can be measured from said change of the resonance waveform by performing an ion implantation by irradiating infrared rays on the upper part of the wafer. |
