| 摘要 |
PURPOSE:To contrive the improvement in the insulating property between a cathode electrode and a gate by forming a groove by etching the Si shallowly around a unit cathode electrode and expanding the range for spreading PIQ to the bottom of said groove. CONSTITUTION:The Si is etched shallowly around a cathode electrode 1 to form a groove 7 and the range for spreading PIQ 4 is stopped at the bottom of the groove, thereby separating the cathode Al electrode 1 from the PIQ. By this constitution, the PIQ is not removed even if the Al electrode 1 is deformed laterally and the deformed electrode 1 is deformed laterally over the PIQ, so that if there is a defect 5 such as a pinhole between a gate and a cathode, the short between the gate and cathode due to that defect can be prevented. |
