| 摘要 |
PURPOSE:To improve the linearity of a horizontal deflection circuit coil current with less switching loss by using a MOS transistor (TR) including a diode caused by parasitic effect as an output TR so as to simplify the circuit and to reduce the power loss in the drive stage. CONSTITUTION:The MOS TRo including the parasitic diode Do caused equivalently due to the parasitic effect is used as an output TR. The on-resistance of the TRo and the on-resistance of the diode Do are selected properly in the diffusion process in the stage of manufacture. The forward voltage of the diode Do, in using a P TRo, is managed to a proper value as a source-drain voltage caused when the circuit current flows from the source to the drain. Thus the linearity of a horizontal deflection coil current IL0 is improved and the trailing X is sharpened. As a result, no horizontal linearity coil LL is required and the switching speed is fast resulting in reducing the switching loss. |
