| 摘要 |
PURPOSE:To obtain the title body having an excellent electrostatic charge capacity, a low residual potential, a high sensitivity at a broad wavelength range of an up to a near infra-red ray, a good sticking property to a substrate, and an excellent resisting property to an environment by specifying forming materials of an electrostatic charge transfer layer and an electrostatic charge generating layer, and a thickness of said layers respectively, and by changing a content of a carbon, a nitrogen or an oxygen atom of the electrostatic charge transfer layer. CONSTITUTION:The electrostatic charge generating layer 31 is composed of a laminated body of the 1st layer 24 made of an a-Si and having 0.1-5mum a thickness and the 2nd layer 23 made of a n-type muc-Si and having 1-10mum a thickness. The electrostatic charge transfer layer 22 has 3-80mum a thickness, and is composed of an amorphous silicon carbide (a-Si:C), an amorphous silicon nitride (a-Si:N) or an amorphous silicon oxide (a-Si:O). The content of C, O and N atoms contd. in the electrostatic charge transfer layer 22 is charged at least one part of a phase contd. in said layer 22. The sudden change of a concentration of an impurity at a boundary of between the electrostatic charge generating layer 31 and the electrostatic charge transfer layer 22 is prevented, and a carrier flows smoothly and a peeling at an interface of between aid layers 31 and 22 is repressed. |
