发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the disconnection of Al wirings due to corrosion or oxidation by a method wherein an insulation fil or a conductive film coating conductor wirings is left only on both sides of the conductor wirings by anisotropic etching. CONSTITUTION:The Al wirings 2 are formed on a semiconductor substrate 1, and next a PSG (phospho-silicate glass) film 4 is adhered over the whole surface. Then, the film 4 is etched by anisotropic etching and thus left only side surfaces of the wirings 2. A PSG film 5 is adhered again over the whole surface. In such a manner, discontinuous lines do not appear on the film 5, and the wirings 2 are protected by complete coating and then prevented from oxidation.
申请公布号 JPS60124951(A) 申请公布日期 1985.07.04
申请号 JP19830234580 申请日期 1983.12.12
申请人 FUJITSU KK 发明人 ARAKI MITSUYOSHI
分类号 H01L21/3213;(IPC1-7):H01L21/88 主分类号 H01L21/3213
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