| 摘要 |
PURPOSE:To conduct direct electric power generation and the direct heating and cooling of a solid, a liquid and a gas efficiently by integrating a thermocouple with high density. CONSTITUTION:A semiconductor sheet 11 is machined in form shown in the figure. P type semiconductors 12 are formed in predetermined width at regular intervals by using a photoetching method or an electron-beam lithographic method. N type semiconductors 13 are shaped in prescribed width at intervals, through which the semiconductors 13 are not mutually connected, among the semiconductors 12 in the same manner as the semiconductors 12. Conductors 14 are evaporated onto the whole plane, and the semiconductors 12, 13 are left so as to be connected in series through photoetching or electron-beam lithography. Terminal wires 15, 16 are connected, and a thermoelectric element piece is obtained. The thermoelectric element pieces formed in this manner are integrated and unified, and the high-density thermoelectric element is shaped. |
