| 摘要 |
PURPOSE:To form a pattern of a good thermal shock having excellent heat resistance by forming a thin layer of a specific silicone resin on a substrate to be treated and flattening the surface by heating and melting particularly when the substrate has a step then irradiating a pattern thereon. CONSTITUTION:The silylated polymethyl silsequioxane which is expressed by formula and is dissolved in a solvent is coated on the substrate to be treated such as semiconductor substrate and is dried; thereafter, the surface is flattened by heating and melting the coating polymer up to the m.p. if the substrate has the step; thereafter, the pattern is irradiated thereon by ionization radiation to crosslink the polymer in the irradiated part. The polymer in the non- irradiated part is dissolved away by using a solvent. The soln. prepd. by dissolving such silicone polymer into a solvent can be spin-coated and can be easily formed to the pattern. The substrate having the considerable steps can be flattened. The above-mentioned polymer withstands >=500 deg.C heat treatment and is crack-free in spite of a temp. change. The pattern is thus made usable for LSIs, VLSIs, etc. |
