| 摘要 |
PURPOSE:To form an alignment mark havng a large contrast, by interposing a region defined by a flat surface between regions where a multiplicity of minute cavities each having a circular cross section are arranged. CONSTITUTION:At a predetermined position on a main surface 2 of a semiconductor wafer 1, at least two regions 4 and 5 are formed each of which has a multiplicity of minute cavities 3 arranged therein. In addtion, a region 7 defined by a linearly elongated flat surface 6 is disposed between the regions 4, 5. In this case, the minute cavities 3 are linearly elongated adjacently to each other. Such an alignment mark has no regular reflection at the cavities 3 in the regions 4, 5 but has a regular reflection at the flat surface 6 in the region 7. Thus, it is possible to form an alignment mark having a large contrast. |
