| 摘要 |
PURPOSE:To obtain a photomask having a transparent conductive film of low resistance by forming a transparent insulating film on the transparent conductive film then partially removing the transparent insulating film to form a pattern, forming a metallic film on the patterned transparent insulating film and the exposed part of the transparent conductive film, then partially removing the metallic film thereby patterning the same. CONSTITUTION:After an ITO film 11 is formed on a substrate 10, an SiO2 film 12 which is an example of the transparent insulating film is formed thereon without breaking the vacuum. The SiO2 film 12 is patterned by photolithography and is thereby etched of the unnecessary part. The resist is thereafter removed. A Cr film 13 is formed by using a sputtering device of a rotating and revolving type and throwing 350W power of DC at the substrate temp. of a room temp. The Cr film 13 is patterned by photolithography. An etching soln. to be used in the stage of etching the unnecessary part of the Cr film in order to form the pattern of a light shielding film is a soln. mixture of ammonium cerium nitrate, perchloric acid and water. |
