发明名称 DRIVKRETS FOR EFFEKT-MOS-TRANSISTORER MED N-KANAL I MOTTAKTSSTEG
摘要 This circuit, for reliably driving a load both in DC and AC mode with a low dissipation, comprises a pair of MOS power transistors, in a push-pull configuration, and a bootstrap circuit including a bootstrap capacitor placed between the source of the upper MOS transistor and a reference voltage point, through a first switch. A second switch is arranged between the supply line and the gate of the upper MOS transistor, while a third switch is arranged between the gate of the upper MOS transistor and the point common to the first switch and the bootstrap capacitor. During DC operation, the switches are open or closed in order to allow for the connection of the gate of the MOS power transistor to the supply voltage. During AC operation, the switches are controlled thereby, alternately the capacitor is charged at the voltage of the reference voltage point and the upper MOS transistor is held at a gate-to-source voltage sufficient to feed the load.
申请公布号 SE8603761(L) 申请公布日期 1987.03.11
申请号 SE19860003761 申请日期 1986.09.09
申请人 SGS MICROELETTRONICA SPA 发明人 CINI C;DIAZZI C;ROSSI D
分类号 H03K5/02;H03F3/20;H03F3/30;H03K5/153;H03K17/04;H03K17/0412;H03K17/042;H03K17/06;H03K17/687;H03K19/017;(IPC1-7):H03K17/687;H02M3/155;H02M7/538 主分类号 H03K5/02
代理机构 代理人
主权项
地址