| 发明名称 |
Semiconductor devices and method of manufacturing same by ion implantation. |
| 摘要 |
<p>A method of manufacturing semiconductor devices by ion implantation, comprising the steps of, i) implanting P ions and ions selected from Si or Group II elements to the same region of GaAs or AlGaAs material, ii) performing a heat treatment to said ion implanted region for activation. Also disclosed are semiconductor devices manufactured according to this method.</p> |
| 申请公布号 |
EP0213919(A2) |
申请公布日期 |
1987.03.11 |
| 申请号 |
EP19860306578 |
申请日期 |
1986.08.26 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MORIZUKA, KOUHEI C/O PATENT DIVISION |
| 分类号 |
H01L21/265;H01L21/324;H01L29/737;(IPC1-7):H01L21/265;H01L29/72;H01L29/06;H01L29/80 |
主分类号 |
H01L21/265 |
| 代理机构 |
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