| 摘要 |
<p>PURPOSE:To effectively absorb noise applied to a semiconductor substrate by positively providing a substrate noise absorbing capacity element between the back surface of the substrate and a grounded conductive stationary substrate. CONSTITUTION:An Si substrate 1 on which many MOSICs 2 are formed on one main surface is set to a power source potential VD, an aluminum film 3 of smaller area than the substrate 1 is directly coated on the opposite main surface, and then coated with a CVD Si3N4 film 4. The substrate 1 is secured to a chip placing unit 5 of a lead frame of ground potential, and resin-sealed at 8. The stationary substrate may use, in addition to the lead frame, a ceramic substrate of which the surface is metallized or a ceramic package. According to the construction, a noise which is applied to the substrate 1 can be escaped through a capacity element formed between the film 3 and the substrate 5 and external leads to the ground side, thereby preventing the IC from damaging or erroneously operating.</p> |
