| 摘要 |
PURPOSE:To reduce a gap between adjacent electrode lead-out layers by a method wherein an electrode lead-out wire is formed of a metal silicide film in a self-matching manner on an electrode lead-out layer and an insulating film when an electrode is formed. CONSTITUTION:A contact hole 40 is formed in an oxide film 2 on a P-type Si substrate 1. Next, an N<+> type electrode lead-out layer 41 is formed through said hole 40, and then a metal film 5 is applied on the surface. Moreover, a resist film 71 is formed in a predetermined region on the film 5 and, with said film 71 used as a mask, Si is injected into the film 5. After the film 71 is removed, heat treatment is applied to turn a region 81 into a metal silicide film 51, and the remaining metal film is removed. Since said film 51 is formed in a self-matching manner, no unnecessary protruding region is formed. Next, a passivation film 3 is applied, a predetermined region of the film 3 is removed, and an electrode wiring 6 is formed in place of the region. According to this method, a gap between adjacent electrode lead-out layers can be reduced without being restricted by the minimum limit of a wiring gap of metal electrodes.
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