Method of manufacturing a semiconductor device free from the current leakage through a semi-conductor layer.
摘要
<p>An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. </p>
申请公布号
EP0213910(A2)
申请公布日期
1987.03.11
申请号
EP19860306556
申请日期
1986.08.22
申请人
SEMICONDUCTOR ENERGY LAB
发明人
YAMAZAKI, SHUNPEI;SUZUKI, KUNIO;MIKIO, KINKA;TAKESHI, FUKADA;MASAYOSHI, ABE;IPPEI, KOBAYASHI;KATSUHIKO, SHIBATA;MASATO, SUSUKIDA;SUSUMU, NAGAYAMA;KAORU, KOYANAGI GREEN HILL IKEDA 302