SEMI-CONDUCTOR MEMORY DEVICE HAVING AN INSULATED GATE FIELD EFFECT TRANSISTOR AS A FUNDAMENTAL ELEMENT

摘要

A semiconductor memory device having two layers of polycrystal silicon and having an insulated gate field effect transistor as a fundamental element including by using a first layer of polycrystalline silicon serving as an electrode of a capacitor and a bit line and a second layer of polycrystalline silicon serving as a gate electrode of the transistor.