发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To further simplify and speedup a high-speed program by deciding, in an IC, whether or not a writing in a FAMOS memory cell is executed. CONSTITUTION:A circuit-selecting signal is transmitted from a mode detector circuit 10 through a mode-switching control signal 9, and a transistor 8 is turned ON. At this time, if the Vth of the FAMOS 17 is less than 10 volts, the impedance is lower than that of a transistor 5, and a signal 22 informs a Low-state. When the signal 22 is in Low-state, a control signal 21 is transmitted to an output circuit 20 via a bit-line-potential detector circuit 18, which exactly lets the circuit 20 output a high-output. In case of the Vth of the FAMOS 17 is above 10 volts, i.e. in a state the write is sufficiently executed, the impedance of the FAMOS 17 becomes larger than that of the transistor 5, and the signal 22 informs a high-state. In such way, by comparing the impedance of a written FAMOS 17 and that of the transistor 5, and by detecting a current that flows, whether or not the writing is executed until the Vth of the FAMOS 17 is sufficiently high can be decided in the IC.</p>
申请公布号 JPS6254897(A) 申请公布日期 1987.03.10
申请号 JP19850193610 申请日期 1985.09.02
申请人 SEIKO EPSON CORP 发明人 KOBAYASHI MASANORI
分类号 G11C16/02;G11C17/00 主分类号 G11C16/02
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