| 摘要 |
PURPOSE:To reduce the transition time of an electron beam by a method wherein the first electron beam deflecting device with which the desired region of a sample will be determined, the second electron beam deflecting device with which region 1 will be determined, and the third electron beam deflecting device to be used to perform an exposure on a single unit pattern are provided. CONSTITUTION:The light of a microscopic electron light source 1 is made to irradiate on the first aperture 4 through the intermediary of an irradiation lens 3, and its image is image-formed on the second aperture 7 using a forming lens 6. The cross section of an electron beam is formed into the rectangular beam of arbitrary size using a beam forming deflector 5. Said rectangular beam is reduced by reduction lens 8 and projected on the surface of a sample 11 by a projection lens 9. The irradiation position on the surface of the sample 11 is set by the movement of a stage 12 and the first deflector 20a, the second deflector 20b and the third deflector 20c, an ON or OFF position is given to the electron beam by the blanking electrode which is operated in synchronization with a positioning deflector, and an exposure is performed. |
