Process for the production of photoresist relief structures having an overhang character using o-quinone diazide photoresist with overexposure

摘要

A process for the production of photoresist relief structures possessing an overhang character comprising coating a substrate with a positive-working photoresist composition based on phenol/formaldehyde condensates of the novolak resin type and photosensitive o-quinonediazide compounds, imagewise overexposure of the photoresist layer at an energy exceeding that required to produce relief structures with a 90 DEG angle between the photoresist compound and the substrate, and treatment of the overexposed layer and substrate with a buffered, aqueous, alkaline developer containing 1-100 ppm of an oxyethylated alkylphenol as a non-ionic surfactant.