| 摘要 |
PURPOSE:To enable a voltage of the same magnitude to be applied to a tunnel oxide film using the same high-voltage pulse by causing an overlapping portion to exist between the word line for selecting the MOS-type memory transistor and the floating gate of the MOS-type memory transistor. CONSTITUTION:A floating gate 1 extends under a word line 4, and a overlapping portion 12 exists between the floating gate 1 and the word line 4. By this, a capacitance CWL is newly formed between the word line 4 and the floating gate 1. Such a structure can be made without etching the floating gate 1 with self-alignment of a control gate 2 except the portion wherein the floating gate 1 forms a memory transistor 8. With this, a voltage of the same magnitude can be applied to the first insulating film using the same high-voltage pulse, at the time of injecting electrons into the floating gate and of removing electrons from the floating gate. |
