| 摘要 |
PURPOSE:To obtain a stable and fine relief pattern by forming a prescribed pattern on an inorg. thin film by the phase change of its crystals, using the pattern as a mask, etching the pattern-formed layer, and removing the rest of the thin inorg. material film to form the relief pattern. CONSTITUTION:A glass base 1 ground and well washed is rotated and a photoresist is dropped to form a thin film 5 of a prescribed thickness. The base 1 is placed in a vacuum vapor deposition machine 9 to form a GeTeSn alloy film 2, and the base 1 i placed on a high-speed rotating stand, and light beams emitted from an Ar ion laser 7 modulated in intensity with a modulator 6 are converged on the surface of the thin film 2. The thin film 2 is plasma-etched to remove the exposed parts of the thin film 2, and when said photoresist undercoat thin film 5 just beneath said parts is exposed, discharge is suspended. An etching gas is changed for O2, and the film 5 is etched by using the residual GeTeSn film 3 as a mask. When the base 1 is exposed, etching is stopped, and the etching gas is again changed for CF4 to perfectly remove the residual film 3. |
