| 摘要 |
PURPOSE:To prevent the field concentration in a channel region from occuring while reducing the space per unit cell by a method wherein a substrate composed of a gate electrode, an impurity regions at low concentration near the gate electrodes and another impurity regions at high concentration adjoining the former regions, the other impurity regions with inverse conductive type and a capacitor electrodes are provided. CONSTITUTION:After etching a part of the surface of a substrate 11 to form element separating grooves 13, 13, ion is implanted in the grooves. Then field oxide films 15 are formed by means of etching back the overall surface of a CVD oxide film 14. Next an N type impurity is implanted utilizing transfer gate electrodes 20 as mask. Resultantly an N type impurity region 21 comprising the transfer gate electrodes 20, 20, N<-> type impurity regions 21a near the 20 and N<+> type impurity region 21b is formed on the surface of the substrate 11 on the bottom of a groove 12 while N type impurity regions 22, 22 comprising the transfer gate electrodes 20, 20, the other N<-> type impurity regions 22a and the other N<+> type impurity regions 22b is formed on the surface of the substrate 11 on the periphery of the groove 12. |
