| 摘要 |
PURPOSE:To contrive the increase in quality of a semiconductor device and the improvement in yield by realization of semiconductor wafers having gettering action by a method wherein one main surface of a semiconductor substrate is coated with a silicon carbide film. CONSTITUTION:The surface of an Si wafer 1 is previously masked with a silicon dioxide film or a silicon nitride film, and is heat-treated in an atmosphere of argon or nitriding gas containing a methane series gas at 1,100-1,200 deg.C for approx. 30min, when an SiC film 2 about 1,000Angstrom thick is formed on the back of the wafer 1 in the atmosphere containing a 5% methane series gas. The SiC film thus formed is extremely stable to high temperature treatments and so gives no adverse infuluences to processes of wafer treatment thereafter. Besides, the titled wafer always can exhibit gettering effect and can be formed by short-time treatment only at a time of process. |
