发明名称 PROCEDIMENTO DI FABBRICAZIONE DI UN DISPOSITIVO MODULARE DI POTENZA A SEMICONDUTTORE E DISPOSITIVO CON ESSO OTTENUTO.
摘要 The components used in the method comprise a heat-dissipating base plate, one or more three-layer plates (the top layer consisting of copper plates, and strips) and a one-piece frame designed to constitute the terminals (81-87). After the chips have been soldered onto the upper plates and connected to the strips, the inner ends of the frame are soldered to points of connection with the chips. This is followed by the encapsulation in resin and the shearing of the outer portions of the frame, which, during the process, serve to temporarily connect the terminals.
申请公布号 IT8719630(D0) 申请公布日期 1987.03.09
申请号 IT19870019630 申请日期 1987.03.09
申请人 SGS MICROELETTRONICA S.P.A. 发明人 ANTONIO PERNICIARO SPATRISANO;LUCIANO GANDOLFO;CARLO MINOTTI;NATALE DI CRISTINA
分类号 A61K39/175;C12N7/06;H01L21/50;H01L23/495;H01L25/065;(IPC1-7):H01L/ 主分类号 A61K39/175
代理机构 代理人
主权项
地址