| 摘要 |
PURPOSE:To reduce the production cost and to improve the photosensitivity from a low wavelength region to high wavelength region by forming an electric charge generating layer of a specific amorphous Si-Ge charge generating material consisting of silicon and germanium as a base material and contg. hydrogen and/or halogen atoms in the atoms thereof. CONSTITUTION:The charge generating layer 2 is formed on a conductive base 1 by depositing a gaseous a gaseous raw material which is the the charge generating material by a sputtering method thereon. A charge transfer material is coated thereon to form the charge transfer layer 3. The charge generating layer 2 in this case is formed of the amorphous Si-Ge charge material consisting of the silicon and germanium as the base material and contg. the hydrogen and/or halogen atoms in the atoms thereof. The production cost is thereby reduced and the practicable sensitivity even for >=800nm light is obtd. In addition, the photosensitive body has the high sensitive to <=800nm light. |
