| 摘要 |
PURPOSE:To enable a pattern having exact periodicity, such as diffraction grating, to be formed through etching even by using a negative type photoresist, by attaching a solvent having affinity to a hydrophobic photoresist to said hydrophobic photoresist. CONSTITUTION:A relieved OMR2' is formed on a substrate 1 by using OMR as a negative resist, and immersed into a solvent having affinity to the substrate 1, such as methyl alcohol 6 to attach it to the surface. Then, it is immersed into an etching solution mixture 7 of a nitric acid type etching soln. and the affinitive solvent to etch it by using the OMR2' as a mask, thus permitting a pattern having exact periodicity, such as diffraction grating, to be formed by etching even when a negative type photoresist is used. |
