| 摘要 |
PURPOSE:To etch a plurality of semiconductors by one time processing making the etching process faster and more efficient by a method wherein a plurality of high frequency electrodes or grounding electrodes are provided on a semiconductor manufacturing equipment be processed by plasma. CONSTITUTION:An electrode 10b out of three electrodes is connected to a high- frequency electrode 4 and the other two electrodes 10a, 10c are grounded while a semiconductor substrate 7 is mounted on the surface and backside of electrode 10b connected to the high-frequency electrode 4. The electrode 10b is impressd with high voltage from the high-frequency electrode 4 to produce plasma in an etching chamber 3. The semiconductor suhbstrate 7 mounted on both sides of electrode 10b is etched by plasma. Through these procedures, etching speed may be accelerated to miniaturize the device in terms of the quantity to be processed since more than three each of electrodes are utilized to process more than two each of semiconductor substrates in total mounted on an electrode. |
