| 摘要 |
PURPOSE:To attain high speed drive for a large load capacitance by mixing a bipolar transistor (TR) and a MOS TR. CONSTITUTION:In bringing a control signal impressed to control terminals 3 and 4 to high and low levels respectively, a PMOS TR 12 and NMOS TRs 13, 14 are turned off and NMOS TRs 31, 32 are turned on. Thus, the base- emitter potential of the bipolar TRs 20, 21 is zero, then the two bipolar TRs 20, 21 are turned off. Then the charging from the 1st bipolar TR 20 or the discharge from the 2nd bipolar TR 21 does not take place and an output terminal 2 goes to a high impedance state. Thus, the high speed circuit is obtained. |
