发明名称 |
METHOD TO PRODUCE A METAL THIN FILM PATTERN |
摘要 |
On a substrate blanket coatings of a metal thin film (5) and an organic polymer (6) are auccessively deposited. A pattern of openings (10) is formed through polymer (6). A blanket layer of matter (11) is deposited in the presence of which thin film (5) and polymer (6) are removable selectively. Polymer (6) is dissolved where the layers thereon are lifted off. The exposed portions of thin film (5) are removed.
<??>Owing to being protected by metal thin film (5) during the lift-off process the substrate is not contaminated in the application of the method especially if dry-etching is used.
<??>The method is employed effectively in semiconductor processing and can be used to fabricate Schottky barrier diodes and/or the metallization for integrated circuits on silicon wafers (1) containing semiconductor devices. |
申请公布号 |
DE3071901(D1) |
申请公布日期 |
1987.03.05 |
申请号 |
DE19803071901 |
申请日期 |
1980.05.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ROTHMAN, LAURA BETH;TOTTA, PAUL ANTHONY;WHITE, JAMES FRANCIS |
分类号 |
H01L21/306;H01L21/027;H01L21/28;H01L21/285;H01L21/338;H01L23/485;(IPC1-7):H01L21/60 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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