| 摘要 |
PURPOSE:To improve the efficiency of film formation by placing light sources in a reaction furnace and releasing a carrier gas and reactive gases from separate chambers so as to prevent the deposition of a reaction product on the light sources. CONSTITUTION:A carrier gas is introduced into the 1st chambers 15 in a reaction furnace 1, and reactive gases are introduced into the 2nd chambers 16 and the 3rd chambers 17. The gases are separately released toward the reaction surfaces 2a of substrates 2 on which films are formed, and ultraviolet rays from light sources 3 are irradiated on the surfaces 2a heated to a proper temp. The sources 3 are symmetrically placed in the furnace 1 apart from the surfaces 2a while properly adjusting the interval between the sources 3 and the surfaces 2a. Thus, the deposition of a reaction product on the light sources is prevented, and the efficiency of film formation is improved. |
