| 摘要 |
PURPOSE:To obtain a Bi-CMOSLSI which can perform the interface with the outside of an LSI at a high speed by providing an input/output circuit which works at the level of a CMOS or the Bi-CMOS to the LSI. CONSTITUTION:The input/output circuits 11-38 are provided in an LSI chip and at least one of these circuits is equal to a Bi-CMOS input/output circuit of this invention. This input/output circuit can attain a high-speed operation by driving the bipolar transistors TR805 and 806 of an output stage by MOS TRQ801 and 802, extracting the base charges of bipolar TR805 and TR806 of the output stage by MOS TR805 and 806 and then cutting off quickly those bipolar transistors. Then the power consumption is extremely reduced because the CMOS transistors of the input stage and the bipolar transistors of the output stage have complementary actions. In addition, the load depending properties of the delay time show the satisfactory characteristics as shown in a figure 603. |
