| 摘要 |
PURPOSE:To restrain varied pattern dimension, by providing a second absorption layer which absorbs radiation and weakens it on a radiation sensitive resist, by controlling the film thickness of the absorption layer, and then by adjusting exposure energy given to the resist layer. CONSTITUTION:A negative photoresist 2 having 1mum of thickness is coated on a base 1 having 1mum of a step with a wafer rotated and then it is baked. At this time, approximate 4,000Angstrom of film thickness difference is generated between the top and the bottom of the step. Next, the coating surface becomes almost flat by coating absorption layer 3 having 5,000Angstrom of thickness with the wafer being rotated. Absorption layer 3 is formed and adjusted by using novolak resin as a base resin, coumarin as an absorption coloring matter, and xylene as a solvent. After a baking is performed for 15min at 80 deg.C the same dimension of pattern exposure is conducted so that latent images 5 and 6 are formed in the resist. Then an absorption layer is removed by using trichloroethane and, in addition, resist patterns 7 and 8 are formed through development. |
