发明名称 |
Method and device for producing a passivation layer on a semiconductor substrate |
摘要 |
Method for obtaining thin passivation layers on semiconductor substrates III-V, characterised in that it consists in subjecting the said substrates to a controlled fluorination at relatively low temperature.
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申请公布号 |
FR2598030(A1) |
申请公布日期 |
1987.10.30 |
申请号 |
FR19860005957 |
申请日期 |
1986.04.24 |
申请人 |
CENTRE NAL RECHERC SCIENTIFIQUE |
发明人 |
ALAIN TRESSAUD, JEAN GRANNEC, ALBERT SERGE BARRIERE, LUCIEN LOZANO ET GERARD COUTURIER;GRANNEC JEAN;BARRIERE ALBERT SERGE;LOZANO LUCIEN;COUTURIER GERARD |
分类号 |
H01L21/314;(IPC1-7):H01L21/314;H01L29/20 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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